Huidige banen gerelateerd aan PhD on InP transistors for future wireless communication - Eindhoven - Eindhoven University of Technology
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Phd On Inp Transistors for Future Wireless
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Eindhoven, Nederland TU Eindhoven Voltijd**Job description**: **Background**: Wireless communication penetrates nearly all aspects of our daily life. Whether we're streaming music while running, checking the latest news on our smartphones, or monitoring home security through IoT devices, wireless technology is there to provide connectivity with maximum mobility. Current 5G wireless utilizes a...
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Wireless Systems Researcher
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Phd Position On Ultra-reliable Intra-aircraft
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Phd On Wellbeing and Justice Implications of
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Phd On Preserving Human Capabilities
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PhD on InP transistors for future wireless communication
3 maanden geleden
Job description
Background:
Wireless communication penetrates nearly all aspects of our daily life. Whether we're streaming music while running, checking the latest news on our smartphones, or monitoring home security through IoT devices, wireless technology is there to provide connectivity with maximum mobility. Current 5G wireless utilizes a frequency band up to 71 GHz, and further scaling requires exploitation of even higher frequencies (e.g., beyond 200GHz). A new semiconductor technology for signal processing is thus demanded. One key challenge is to make good high-gain, low-noise amplifiers that operate in the 200-300 GHz frequency band.
Research goal:
The world’s best low-noise amplifiers are made with InP-based high electron mobility transistors (HEMT), due to the excellent electron transport properties of the lattice-matched InGaAs material. To operate at such high frequencies, accurate epitaxy control, extra fine sub-100 nm gate length, and aggressive dielectric thickness scaling are needed. Currently, these requirements impose challenges on the mass adoption of this technology, as usually EBL is needed. At TU/e, we aim to address the problem with state-of-the-art mass manufacturing technologies. The first step involves the essential steps toward high manufacturability, utilizing our in-house ASML DUV scanner. The second stage will be an exploration of a sustained scaling path, including MOS-HEMTs with high-k dielectrics and advanced device architecture. In this project, you will be at the very core of the development of a new revolutionary semiconductor technology for future wireless. The project involves the full value chain in high-frequency devices - from epitaxy to simulation, fabrication, and characterization.
The project is part of the collaborative project with NXP and the IC group at TU Eindhoven, named “Future Wireless Interfaces (FWITEC)”. The project is aimed beyond 5G communication technology and focuses on the application of using wireless interconnect to replace physical links. They encompass short-range inter-chip and intra-chiplet communication, in-package communication up to in-house/in-production-line line-of-sight (
