RF Power Device Engineer

2 weken geleden

Nijmegen, Gelderland, Nederland HIP BV Voltijd
Job Title: RF Power Device Engineer

We are seeking a highly skilled RF Power Device Engineer to join our team at HIP BV. As a key member of our engineering team, you will be responsible for designing and developing state-of-the-art RF power devices, primarily GaN-based transistors.

Key Responsibilities:
  • Design and implement the physical layout of transistors for multi- and single-project wafers in collaboration with RF designers.
  • Conduct thermal assessments of RF dies and discrete components using simulations validated against thermal measurements.
  • Contribute to the electro-thermal modeling of transistors, including electrical characterization and compact model generation.
Requirements:
  • Master's or Ph.D. degree in Electrical Engineering or equivalent with a strong foundation in radio frequency fundamentals.
  • Deep knowledge of GaN-based transistor working principles.
  • 5-10 years of professional experience in RF engineering of GaN devices is highly desirable.
  • Experience in physical design of RF power transistors, including layout and simulation tools such as Keysight ADS suite.
  • Familiarity with thermal simulation software such as ANSYS, SYMMIC, or equivalent.
  • Some experience with DC and RF characterization techniques (pulsed IV, s-par, load-pull).
  • Strong communication and interpersonal skills to interact with multicultural colleagues.
  • Curiosity and determination to acquire necessary knowledge and skills to accomplish unfamiliar tasks.
  • Desire to be part of a winning team with no nine-to-five mentality.
  • Proficient in English language.

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