RF Power Device Engineer

4 weken geleden

Nijmegen, Gelderland, Nederland HIP BV Voltijd
Job Title: RF Power Device Engineer

The RF Power Device Engineer will play a crucial role in the development of cutting-edge RF power devices, primarily GaN-based transistors. This position requires close collaboration with technology and design experts to create state-of-the-art devices for various application domains.

Key Responsibilities:
  • Design and implement the physical layout of transistors for multi- and single-project wafers in conjunction with RF designers.
  • Conduct thermal assessments of RF dies and discrete components using simulations validated against thermal measurements.
  • Contribute to the electro-thermal modeling of transistors, involving electrical characterization of designed parts and generation/validation of compact models.
Requirements:
  • A Master's or Ph.D. degree in Electrical Engineering or equivalent with a strong foundation in radio frequency fundamentals.
  • Deep understanding of GaN-based transistor working principles.
  • 5-10 years of professional experience in RF engineering of GaN devices is highly valued.
  • Experience in physical design of RF power transistors, with working knowledge of layout and simulation tools such as Keysight ADS suite or equivalent.
  • Familiarity with thermal simulation software such as ANSYS, SYMMIC, or equivalent. Willingness to learn is required for those lacking experience with thermal simulations.
  • Some experience with DC and RF characterization techniques (pulsed IV, s-par, load-pull).
  • Strong communication and interpersonal skills for effective collaboration with multicultural colleagues.
  • Curiosity and determination to acquire necessary knowledge and skills for unfamiliar tasks.
  • Desire to be part of a winning team with a dynamic work environment.
  • Proficient in English language.

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