RF Power Device Engineer
6 maanden geleden
The RF power device engineer will take responsibility for various tasks related to the physical design, modeling and characterization of RF power devices, mostly GaN-based transistors, in close working with technology and design experts. The aim is that of developing state of the art devices suitable for various application domains.
Functieomschrijving
- Implement the physical design (layout) of transistors populating multi- and single-project wafers in close cooperation with RF designers.
- Be accountable for the thermal assessment of RF dies and discrete components by means of simulations validated against thermal measurements.
- Contribute to the electro-thermal modeling of transistors. This task entails the electrical characterization of the designed parts, and the generation and validation of their corresponding compact models.
Functie-eisen
- A university degree (MSc or PhD) in Electrical Engineering or equivalent with strong academic foundation on radio frequency fundamentals.
- Deep knowledge of the working principles of GaN-based transistors.
- 5 to 10 years of professional experience in RF engineering of GaN devices is a premium.
- Experience in physical design of RF power transistors. Working knowledge of layout andsimulation tools such as Keysight ADS suite or equivalent.
- Familiarity with thermal simulation software such as ANSYS, SYMMIC or equivalent. Willingnessto learn is required in case of lack of experience with thermal simulations.
- Some experience with DC and RF characterization techniques (pulsed IV, s-par, load-pull).
- Strong communication and interpersonal skills to interact with multicultural colleagues.
- Curiosity and determination to acquire the necessary knowledge and skills to accomplish unfamiliar tasks.
- Desire to be part of a winning team with no nine-to-five mentality.
- Proficient in English language.
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